New Delhi, December 28, 2008 : .An Indian scientist from Tata Institute of Fundamental Research, Hyderabad is heading a group that develops efficient, low-cost next-generation semiconductor materials.
This will help India to be a technological leader in this field.India recently announced a Rs 2.30,000 crore incentive to become a world leader in electronics manufacturing, with semiconductors being the core building blocks.According to a Science & Technology Ministry press release, Tuesday’s announcement stated that India could become the world hub for Electronic System Design and Manufacturing with the help of next-generation semiconductor materials.
Low-energy, low-cost materials like metal halide and organic semiconductors can make large-scale electronic applications economically viable.These materials are still less electrically conductive than traditional inorganic semiconductors.
Doping can address this lag by increasing the number of electrons and holes available to enhance conductivity or controlling the charge extraction/injection properties of semiconductors at interfaces.This will affect the device’s performance.
The research community is focusing their attention on electronic dopants systems based upon highly complex, reactive organic and organometallic compounds.These are inefficient and can leave behind side products that affect long-term stability.
The release stated that “There is a need for us to look beyond these approaches” and the current state of research in electronic-doping.Pabitra K.Nayak (TIFR Reader) is the Swarnajayanti Fellow 2020-21.She is the leader of the group of researchers working towards the development of next-generation, low-cost semiconductor materials.
Nayak pointed out all of these options will increase India’s competition in the field of semiconductor material research and development.This is crucial for sustained socio-economic growth that can be driven by clean energy.
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